features symbol v ds v gs i dm t j , t stg symbol ty p max 64 83 89 120 r jl 53 70 junction and storage temperature range a p d c 1.5 1 -55 to 150 t a =70c i d -4 -3.5 -30 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 8 gate-source voltage drain-source voltage -20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO8403 v ds (v) = -20v i d = -4 a (v gs = -4.5v) r ds(on) < 42m ? (v gs = -4.5v) r ds(on) < 52m ? (v gs = -2.5v) r ds(on) < 70m ? (v gs = -1.8v) esd rating: 3000v hbm the AO8403 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. it is esd protected. standard product AO8403 is pb-free (meets rohs & sony 259 specifications). AO8403l is a green product ordering option. AO8403 and AO8403l are electrically identical. d s g d s s g 1 2 3 4 8 7 6 5 tssop-8 top view d s s d p-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
AO8403 symbol min typ max units bv dss -20 v -1 t j =55c -5 1 a 10 a v gs(th) -0.3 -0.55 -1 i d(on) -25 a 35 42 t j =125c 48 60 45 52 m ? 56 70 m ? g fs 816 s v sd -0.78 -1 v i s -2.2 a c iss 1450 1750 pf c oss 205 pf c rss 160 pf r g 6.5 ? q g 17.2 21 nc q gs 1.3 nc q gd 4.5 nc t d(on) 9.5 ns t r 17 ns t d(off) 94 ns t f 35 ns t rr 31 ns q rr 13.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =-4a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.8v, i d =-3a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-4a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current v ds =0v, v gs =4.5v i gss m ? v gs =-2.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-4a i f =-4a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-4a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.5 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate-body leakage current gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev1: august 2005 www.freescale.net.cn 2 / 4
AO8403 typical electrical and thermal characteristics 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -8v -3.0v 0 2 4 6 8 10 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =-4a, v gs =-2.5v i d =-2a, v gs =-1.8v i d =-4a, v gs =-4.5v 20 30 40 50 60 70 80 90 100 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-4a 25c 125c 25c 125c v ds =-5v v gs =-1.8v v gs =-2.5v v gs =-4.5v www.freescale.net.cn 3 / 4
AO8403 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =-10v i d =-4a t j(max) =150c t a =25c www.freescale.net.cn 4 / 4
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